Preparation and characterization of Bi2Se3 thin films deposited by successive ionic layer adsorption and reaction (SILAR) method
Materials chemistry and physics, 2000•Elsevier
A successive ionic layer adsorption and reaction (SILAR) method which is a simple and
versatile for yielding good quality Bi2Se3 films of thickness upto∼ 1.2 μm under a choice of
deposition conditions is presented. The films were deposited onto glass and single
crystalline wafer of Si (111). The structural, optical and electrical properties were studied.
The thin films were smooth and homogeneous. The films annealed at 473K in air for 1h, did
not show significant change in crystallinity and optical bandgap.
versatile for yielding good quality Bi2Se3 films of thickness upto∼ 1.2 μm under a choice of
deposition conditions is presented. The films were deposited onto glass and single
crystalline wafer of Si (111). The structural, optical and electrical properties were studied.
The thin films were smooth and homogeneous. The films annealed at 473K in air for 1h, did
not show significant change in crystallinity and optical bandgap.
A successive ionic layer adsorption and reaction (SILAR) method which is a simple and versatile for yielding good quality Bi2Se3 films of thickness upto ∼1.2μm under a choice of deposition conditions is presented. The films were deposited onto glass and single crystalline wafer of Si(111). The structural, optical and electrical properties were studied. The thin films were smooth and homogeneous. The films annealed at 473K in air for 1h, did not show significant change in crystallinity and optical bandgap.
Elsevier
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