Preparation of AgInS2 chalcopyrite thin films by chemical spray pyrolysis
Materials Research Bulletin, 2003•Elsevier
AgInS2 thin films were prepared by the spray pyrolysis technique using a water/ethanol
solution containing silver acetate, indium chloride and thiourea. We reported our results on
the characterization of tetragonal AgInS2 (chalcopyrite type) films, which were grown from
indium deficient spraying solution. The films displayed a n-type conductivity with room
temperature resistivities in the range between 103 and 104Ωcm. The absorption spectra of
sprayed films revealed two direct band-gaps with characteristic energies around 1.87 and …
solution containing silver acetate, indium chloride and thiourea. We reported our results on
the characterization of tetragonal AgInS2 (chalcopyrite type) films, which were grown from
indium deficient spraying solution. The films displayed a n-type conductivity with room
temperature resistivities in the range between 103 and 104Ωcm. The absorption spectra of
sprayed films revealed two direct band-gaps with characteristic energies around 1.87 and …
AgInS2 thin films were prepared by the spray pyrolysis technique using a water/ethanol solution containing silver acetate, indium chloride and thiourea. We reported our results on the characterization of tetragonal AgInS2 (chalcopyrite type) films, which were grown from indium deficient spraying solution. The films displayed a n-type conductivity with room temperature resistivities in the range between 103 and 104Ωcm. The absorption spectra of sprayed films revealed two direct band-gaps with characteristic energies around 1.87 and 2.01eV, which are in good agreement with the reported energy values for interband transitions from the split p-like valence band to the s-like conduction band in tetragonal AgInS2 single crystals.
Elsevier
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