Printed non-volatile resistive switches based on zinc stannate (ZnSnO3)
We present all printed non-volatile resistive switches based on zinc stannate (ZnSnO 3) for
the memory applications. The device is fabricated on a flexible poly (ethyleneterephthalate)(
PET) substrate through electrohydrodynamic (EHD) technique, where active layer of ZnSnO
3 (∼ 130 nm) is deposited on the indium tin oxide (ITO) coated PET and a 100 μm silver line
is deposited with thickness of 350 nm and length of 2 mm as a top electrode. The device
exhibits resistive switching behavior at dual polarity voltage±8 V. The measured value of …
the memory applications. The device is fabricated on a flexible poly (ethyleneterephthalate)(
PET) substrate through electrohydrodynamic (EHD) technique, where active layer of ZnSnO
3 (∼ 130 nm) is deposited on the indium tin oxide (ITO) coated PET and a 100 μm silver line
is deposited with thickness of 350 nm and length of 2 mm as a top electrode. The device
exhibits resistive switching behavior at dual polarity voltage±8 V. The measured value of …
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