Pronounced surface band bending of thin-film silicon revealed by modeling core levels probed with hard x-rays
D Wippler, RG Wilks, BE Pieters… - … Applied Materials & …, 2016 - ACS Publications
Enhancing the probing depth of photoemission studies by using hard X-rays allows the
investigation of buried interfaces of real-world device structures. However, it also requires
the consideration of photoelectron-signal attenuation when evaluating surface effects. Here,
we employ a computational model incorporating surface band bending and exponential
photoelectron-signal attenuation to model depth-dependent spectral changes of Si 1s and Si
2s core level lines. The data were acquired from hydrogenated boron-doped …
investigation of buried interfaces of real-world device structures. However, it also requires
the consideration of photoelectron-signal attenuation when evaluating surface effects. Here,
we employ a computational model incorporating surface band bending and exponential
photoelectron-signal attenuation to model depth-dependent spectral changes of Si 1s and Si
2s core level lines. The data were acquired from hydrogenated boron-doped …
[引用][C] Pronounced Surface Band Bending of Thin-Film Silicon Revealed by Modeling Core Levels Probed with Hard X-rays
W David, J van Albada Sacha, G Dominic, H Jürgen… - 2016
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