The energy distributions of secondary ions for the ion beam sputtering of a Ga 2 O 3 target
using O 2+ and Ar+ ions are measured in dependence on various process parameters using
energy-selective mass spectrometry. The process parameters include sputtering geometry
(ion incidence angle α⁠, polar emission angle β⁠, scattering angle γ⁠), the energy of
incident ions E ion⁠, and the background pressure of O 2⁠. The main secondary ion
species are identified to be Ga+⁠, O+⁠, O 2+⁠, and, when argon is used as a process gas …