Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
D Chidambarrao, AC Mocuta, DM Mocuta… - US Patent …, 2010 - Google Patents
The invention relates to a semiconductor structure and method of manufacturing and more
particularly to a CMOS device with at least one embedded SiGe layer in the source/drain
region of the PFET, and at least one embedded SiGe layer in the channel region of the
NFET. In one embodiment, the structure of the invention enhances the electron mobility in
the NFET device, and further enhances the hole mobility in the PFET device. Additionally, by
using the fabrication meth ods and hence achieving the final structure of the invention, it is …
particularly to a CMOS device with at least one embedded SiGe layer in the source/drain
region of the PFET, and at least one embedded SiGe layer in the channel region of the
NFET. In one embodiment, the structure of the invention enhances the electron mobility in
the NFET device, and further enhances the hole mobility in the PFET device. Additionally, by
using the fabrication meth ods and hence achieving the final structure of the invention, it is …
Pseudomorphic Si/SiGe/Si body device with embedded SiGe source/drain
D Chidambarrao, AC Mocuta, DM Mocuta… - US Patent …, 2012 - Google Patents
The invention relates to a semiconductor structure and method of manufacturing and more
particularly to a CMOS device with at least one embedded SiGe layer in the source/drain
region of the PFET, and at least one embedded SiGe layer in the channel region of the
NFET. In one embodiment, the structure of the invention enhances the electron mobility in
the NFET device, and further enhances the hole mobility in the PFET device. Additionally, by
using the fabrication meth ods and hence achieving the final structure of the invention, it is …
particularly to a CMOS device with at least one embedded SiGe layer in the source/drain
region of the PFET, and at least one embedded SiGe layer in the channel region of the
NFET. In one embodiment, the structure of the invention enhances the electron mobility in
the NFET device, and further enhances the hole mobility in the PFET device. Additionally, by
using the fabrication meth ods and hence achieving the final structure of the invention, it is …
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