RF characterization and modelling of high density through silicon vias for 3D chip stacking
L Cadix, C Bermond, C Fuchs, A Farcy, P Leduc… - Microelectronic …, 2010 - Elsevier
3D integration including Through Silicon Vias is more and more considered as the solution
to overcome conventional 2D IC issues. In this way, TSV analytical equivalent models are
hardly required to achieve 3D products and to make design recommendations. In this paper,
a 3D process flow is detailed and used to integrate specific RF structures including copper-
filled TSVs with 3μm wide and 15μm deep dimensions. Both measurements and simulations
of these structures lead to the extraction of frequency-dependent parameters and the …
to overcome conventional 2D IC issues. In this way, TSV analytical equivalent models are
hardly required to achieve 3D products and to make design recommendations. In this paper,
a 3D process flow is detailed and used to integrate specific RF structures including copper-
filled TSVs with 3μm wide and 15μm deep dimensions. Both measurements and simulations
of these structures lead to the extraction of frequency-dependent parameters and the …