We report the ultraviolet absorption of boron-bound excitons at low temperature in a single
crystal of diamond grown by chemical vapor deposition. The no-phonon (NP) and phonon-
assisted lines are identified by comparison with cathodoluminescence. The oscillator
strength of the NP lines was found to be 3.0× 10− 5 based on the measured absorption
cross-section. This value is discussed in terms of the scaling law known for doped silicon,
where the oscillator strength varies proportionally to E loc 2.5⁠, with E loc being the …

Recent progresses in doping control techniques for diamond accelerate the use of doped
diamond in electronic applications. Because boron impurities play a unique and important
role as acceptors providing p-type conductivity, boron-doped diamond has been intensely
studied, eg by Hall effect measurements and infrared spectroscopy [1]. On the other hand,
the boron-bound exciton―a complex formed due to capture of an exciton at a boron
impurity―has so far been discussed only on the basis of cathodoluminescence (CL)[2, 3] …