Reactive ion etching (RIE) of group IV or III/V semiconductors is an important step in many
lithographic processes in semiconductor technology. Typically, surface roughness is
undesired, but more and more applications arise where rough surfaces are used as
functional quasi‐layers. Either to avoid roughness or to precisely define it, in situ monitoring
and control of the state of the etch front is desirable to increase yield. As we already know,
reflectance anisotropy spectroscopy (RAS) or RAS equipment might be used to monitor the …

Reactive Ion Etching (RIE) Induced Surface Roughness Precisely Monitored In-Situ and in
Real Time by Reflectance Anisotropy Spectroscopy (RAS) in Combination with Principle
Component Analysis (PCA) … Reactive Ion Etching (RIE) Induced Surface Roughness
Precisely Monitored In-Situ and in Real Time by Reflectance Anisotropy Spectroscopy (RAS)
in Combination with Principle Component Analysis (PCA) …