The control of positioning of self-assembled dots is critical for the fabrication of regimented
arrays in signal processing applications. We report the controllable positioning of self-
assembled Ge dots using selectively grown Si mesas as a template. The dependence of the
dot arrangement on growth temperature and Ge thickness has been investigated. The
experimental results show ability to control the positioning of Ge dots based on energetically
preferential nucleation. The Ge dot growth on Si mesas is demonstrated to be a promising …