Hot-carrier degradation and bias-temperature instability of FinFET and fully-depleted SOI
devices with high-k gate dielectrics and metal gates are investigated. Thinner SOI results in
increased hot-carrier degradation, which can be recovered by junction engineering. FinFETs
with (110) Si active surfaces exhibit degradation of sub-threshold swing after hot carrier
stress, indicating generation of interface states. The effect of duty cycle on bias-temperature
instability modulates the quasi-steady-state trap occupancy over a broad distribution of …