Reliable BEOL integration process with direct CMP of porous SiCOH dielectric
CD Dimitrakopoulos, SM Gates, VJ McGahay… - US Patent …, 2007 - Google Patents
The present invention relates to methods of improving the fabrication of interconnect
structures of the single or dual damascene type, in which there is no problem of hard mask
retention or of conductivity between the metal lines after fabrication. The methods of the
present invention include at least steps of chemical mechanical polishing and UV expo Sure
or chemical repair treatment which steps improve the reliability of the interconnect structure
formed. The present invention also relates to an interconnect structure which include a …
structures of the single or dual damascene type, in which there is no problem of hard mask
retention or of conductivity between the metal lines after fabrication. The methods of the
present invention include at least steps of chemical mechanical polishing and UV expo Sure
or chemical repair treatment which steps improve the reliability of the interconnect structure
formed. The present invention also relates to an interconnect structure which include a …
Reliable BEOL integration process with direct CMP of porous SiCOH dielectric
CD Dimitrakopoulos, SM Gates, VJ McGahay… - US Patent …, 2011 - Google Patents
The present invention relates to methods of improving the fabrication of interconnect
structures of the single or dual damascene type, in which there is no problem of hard mask
retention or of conductivity between the metal lines after fabrication. The methods of the
present invention include at least steps of chemical mechanical polishing and UV expo Sure
or chemical repair treatment which steps improve the reliability of the interconnect structure
formed. The present invention also relates to an interconnect structure which include a …
structures of the single or dual damascene type, in which there is no problem of hard mask
retention or of conductivity between the metal lines after fabrication. The methods of the
present invention include at least steps of chemical mechanical polishing and UV expo Sure
or chemical repair treatment which steps improve the reliability of the interconnect structure
formed. The present invention also relates to an interconnect structure which include a …
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