Restrictions of Si-based Ge nanodots from porous alumina membranes
This paper reports growth of ordered Ge nanodots (NDs) with uniform sizes on silicon
substrates using porous alumina membranes (PAMs) as templates. The relationships
between substrate temperatures (400–600° C) and site distribution of Ge NDs are studied.
Ordered arrangements of Ge NDs are realized at 400° C and 500° C, respectively. Due to
joint effect of substrate temperature and restrictions from PAM, an uncommon size change
trend is found. At 400° C, triangular pyramid-like and short cylindrical Ge NDs are obtained …
substrates using porous alumina membranes (PAMs) as templates. The relationships
between substrate temperatures (400–600° C) and site distribution of Ge NDs are studied.
Ordered arrangements of Ge NDs are realized at 400° C and 500° C, respectively. Due to
joint effect of substrate temperature and restrictions from PAM, an uncommon size change
trend is found. At 400° C, triangular pyramid-like and short cylindrical Ge NDs are obtained …
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