[HTML][HTML] Room temperature ferromagnetism in thermally diffused Cr in GaN
We report room temperature ferromagnetism in crystalline GaCrN prepared by Cr deposition
and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature
increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material
with significant increase in electron carrier concentration due to the presence of Cr. Optical
property of GaCrN is found to be very similar to GaN with an additional peak at 3.29 eV due
to Cr. The hysteresis measurements show that the ferromagnetic ordering is maintained up …
and drive-in diffusion with Curie temperature much above 300 K. The Curie temperature
increases with increasing active Cr concentration. Cr doped GaN acts as an n-type material
with significant increase in electron carrier concentration due to the presence of Cr. Optical
property of GaCrN is found to be very similar to GaN with an additional peak at 3.29 eV due
to Cr. The hysteresis measurements show that the ferromagnetic ordering is maintained up …
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