Sb surfactant effect on GaInAs/GaAs highly strained quantum well lasers emitting at 1200 nm range grown by molecular beam epitaxy
A surfactant effect of antimony (Sb) on highly strained GaInAs quantum wells (QWs) was
studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL)
was observed by adding the dilute Sb. The QWs showed an increased PL intensity and
narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force
microscope study showed a flattened surface morphology by the introduction of the Sb.
Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm …
studied by molecular beam epitaxy. Noticeable improvement of the photoluminescence (PL)
was observed by adding the dilute Sb. The QWs showed an increased PL intensity and
narrow linewidth of 23 meV for the wavelength range up to 1180 nm. An atomic force
microscope study showed a flattened surface morphology by the introduction of the Sb.
Broad-area lasers with a GaInAsSb/GaAs double-QW active layer emitting at 1170 nm …
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