We present a fabrication method for reliably and reproducibly forming electrical contacts to
2D materials, based on the tri-layer resist system. We demonstrate the applicability of this
method for epitaxial graphene on silicon carbide (epigraphene) and the transition metal
dichalcogenides (TMDCs) molybdenum disulfide ($ MoS_2 $). For epigraphene, the specific
contact resistances are of the order of $\rho_c $~ $50 $$\Omega\mu m $, and follow the
Landauer quantum limit, $\rho_c\propto n^{-1/2} $, with $ n $ being the carrier density of …

We report a reliable and scalable fabrication method for producing electrical contacts to two-
dimensional (2D) materials based on the tri-layer resist system. We demonstrate the
applicability of this method in devices fabricated on epitaxial graphene on silicon carbide
(epigraphene) used as a scalable 2D material platform. For epigraphene, data on nearly 70
contacts result in median values of the one-dimensional (1D) specific contact resistances
ρc∼ 67 Ω· μm and follow the Landauer quantum limit ρc∼ n–1/2, consistently reaching …