Scaling laws for the reduction of threading dislocation densities in homogeneous buffer layers
In the heteroepitaxial growth of films with large misfit with the underlying substrate (linear
mismatch strains in excess of 1%–2%) the generation of misfit dislocations and threading
dislocations (TDs) is ubiquitous for thicknesses well in excess of the equilibrium critical
thickness. Experimental data suggest that the TD density in relaxed homogeneous buffer
layers can be divided into three regimes:(i) an entanglement region near the film/substrate
interface corresponding to TD densities of∼ 1010–1012 cm− 2;(ii) a falloff in TD density that …
mismatch strains in excess of 1%–2%) the generation of misfit dislocations and threading
dislocations (TDs) is ubiquitous for thicknesses well in excess of the equilibrium critical
thickness. Experimental data suggest that the TD density in relaxed homogeneous buffer
layers can be divided into three regimes:(i) an entanglement region near the film/substrate
interface corresponding to TD densities of∼ 1010–1012 cm− 2;(ii) a falloff in TD density that …
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