Secondary phases and their influence on optical and electrical properties of electrodeposited Cu2FeSnS4 films
Applied Physics A, 2021•Springer
Abstract Cu–Fe–Sn–S have been electrodeposited on indium tin oxide coated glass
(ITO/glass) substrates, varying only the deposition time, followed by sulfurization in argon
atmosphere at a temperature of 500° C. X-ray diffraction patterns confirmed the formation of
polycrystalline CFTS and other secondary phases. The Raman spectroscopy results confirm
the formation of stannite phase, by the existence of the most intense peak at 330 cm− 1
corresponding to A-symmetry vibrational mode, while the SnS 2 surface phase reduces …
(ITO/glass) substrates, varying only the deposition time, followed by sulfurization in argon
atmosphere at a temperature of 500° C. X-ray diffraction patterns confirmed the formation of
polycrystalline CFTS and other secondary phases. The Raman spectroscopy results confirm
the formation of stannite phase, by the existence of the most intense peak at 330 cm− 1
corresponding to A-symmetry vibrational mode, while the SnS 2 surface phase reduces …
Abstract
Cu–Fe–Sn–S have been electrodeposited on indium tin oxide coated glass (ITO/glass) substrates, varying only the deposition time, followed by sulfurization in argon atmosphere at a temperature of 500 °C. X-ray diffraction patterns confirmed the formation of polycrystalline CFTS and other secondary phases. The Raman spectroscopy results confirm the formation of stannite phase, by the existence of the most intense peak at 330 cm−1 corresponding to A-symmetry vibrational mode, while the SnS2 surface phase reduces upon increasing deposition time. The inferred bandgaps by specular transmission are in 1.4–1.7 eV range, influenced by the detected orthorhombic Cu4SnS4 and rhodostannite secondary phases. The electrical measurements confirm the p-type nature of the films, while density of free carriers is relatively high (~ 1019 cm−3), leading to extremely low resistivity in the Ω cm range.
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