Selective oxidation of AlInN layers for current confinement in III–nitride devices
J Dorsaz, HJ Bühlmann, JF Carlin, N Grandjean… - Applied Physics …, 2005 - pubs.aip.org
Highly selective oxidation of an AlInN interlayer buried in a GaN matrix is demonstrated. This
technique was successfully applied to form current apertures in III-nitride light-emitting
diodes (LEDs). GaN LEDs were grown by metal-organic vapor phase epitaxy with a lattice-
matched AlInN layer inserted in the n-doped region of the device. Mesas were etched by Cl
2∕ Ar reactive ion etching to give access to the AlInN sidewalls. The sample was then
oxidized anodically in a nitrilotriacetic acid solution. Using this technique, the AlInN layer …
technique was successfully applied to form current apertures in III-nitride light-emitting
diodes (LEDs). GaN LEDs were grown by metal-organic vapor phase epitaxy with a lattice-
matched AlInN layer inserted in the n-doped region of the device. Mesas were etched by Cl
2∕ Ar reactive ion etching to give access to the AlInN sidewalls. The sample was then
oxidized anodically in a nitrilotriacetic acid solution. Using this technique, the AlInN layer …
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