Semiconductor integrated circuit devices having high-Q wafer backside inductors and methods of fabricating same
Methods are provided for fabricating semiconductor IC (inte grated circuit) chips having high-
Q on-chip inductors formed on the chip backside and connected to integrated circuits on the
chip frontside using through-wafer interconnects. For example, a semiconductor device with
a backside integrated inductor includes a semiconductor Substrate having a fron tside, a
backside and a buried insulating layer interposed between the front and backsides of the
substrate. An inte grated circuit is formed on the frontside of the semiconductor Substrate …
Q on-chip inductors formed on the chip backside and connected to integrated circuits on the
chip frontside using through-wafer interconnects. For example, a semiconductor device with
a backside integrated inductor includes a semiconductor Substrate having a fron tside, a
backside and a buried insulating layer interposed between the front and backsides of the
substrate. An inte grated circuit is formed on the frontside of the semiconductor Substrate …
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