Silicon carbide power metal-oxide semiconductor field effect transistors having a shorting channel and methods of fabricating silicon carbide metal-oxide …
Silicon carbide metal-oxide semiconductor field effect tran sistors (MOSFETs) and methods
of fabricating silicon car bide MOSFETs are provided. The silicon carbide MOSFETs have an
n-type Silicon carbide drift layer, Spaced apart p-type Silicon carbide regions in the n-type
Silicon carbide drift layer and having n-type Silicon carbide regions therein, and a nitrided
oxide layer. The MOSFETs also have n-type Shorting channels extending from respective
ones of the n-type Silicon carbide regions through the p-type Silicon carbide regions to the n …
of fabricating silicon car bide MOSFETs are provided. The silicon carbide MOSFETs have an
n-type Silicon carbide drift layer, Spaced apart p-type Silicon carbide regions in the n-type
Silicon carbide drift layer and having n-type Silicon carbide regions therein, and a nitrided
oxide layer. The MOSFETs also have n-type Shorting channels extending from respective
ones of the n-type Silicon carbide regions through the p-type Silicon carbide regions to the n …