Single carbon nanotube transistor at GHz frequency
Nano letters, 2008•ACS Publications
We report on microwave operation of top-gated single carbon nanotube transistors. From
transmission measurements in the 0.1− 1.6 GHz range, we deduce device transconductance
gm and gate− nanotube capacitance C g of micro-and nanometric devices. A large and
frequency-independent gm∼ 20 μS is observed on short devices, which meets the best dc
results. The capacitance per unit gate length of 60 aF/μm is typical of top gates on a
conventional oxide with ε∼ 10. This value is a factor of 3− 5 below the nanotube quantum …
transmission measurements in the 0.1− 1.6 GHz range, we deduce device transconductance
gm and gate− nanotube capacitance C g of micro-and nanometric devices. A large and
frequency-independent gm∼ 20 μS is observed on short devices, which meets the best dc
results. The capacitance per unit gate length of 60 aF/μm is typical of top gates on a
conventional oxide with ε∼ 10. This value is a factor of 3− 5 below the nanotube quantum …
We report on microwave operation of top-gated single carbon nanotube transistors. From transmission measurements in the 0.1−1.6 GHz range, we deduce device transconductance gm and gate−nanotube capacitance Cg of micro- and nanometric devices. A large and frequency-independent gm ∼ 20 μS is observed on short devices, which meets the best dc results. The capacitance per unit gate length of 60 aF/μm is typical of top gates on a conventional oxide with ε ∼ 10. This value is a factor of 3−5 below the nanotube quantum capacitance which, according to recent simulations, favors high transit frequencies fT = gm/2πCg. For our smallest devices, we find a large fT ∼ 50 GHz with no evidence of saturation in length dependence.
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