The small-scale effect on the piezoelectric potential of strained gallium nitride (GaN)
nanowires (NWs) is studied by employing the size-dependent dielectric constant measured
from the present molecular dynamics simulations and previous reported size-dependent
elastic constant and piezoelectric coefficient. The intrinsic GaN NWs without free charge
carriers are considered in the present study. The results show that the small-scale effect is
significant for NWs in the range of nanometers and may increase the piezoelectric potential …