presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two
different growth temperatures of 450 C and 325 C were compared. Interpolated bandgap
energies suggest that the development of this alloy would extend the range of available
direct bandgaps attainable in materials lattice-matched to InP to energies as high as 1.81
eV. However, the peak energy of the observed PL emission is anomalously low for samples …