[引用][C] Spatially indirect radiative recombination in InAlAsSb grown lattice matched to InP by MBE

[HTML][HTML] Spatially indirect radiative recombination in InAlAsSb grown lattice-matched to InP by molecular beam epitaxy

LC Hirst, MP Lumb, J Abell, CT Ellis… - Journal of Applied …, 2015 - pubs.aip.org
A photoluminescence (PL) spectroscopy study of the bulk quaternary alloy InAlAsSb is
presented. Samples were grown lattice-matched to InP by molecular beam epitaxy and two
different growth temperatures of 450 C and 325 C were compared. Interpolated bandgap
energies suggest that the development of this alloy would extend the range of available
direct bandgaps attainable in materials lattice-matched to InP to energies as high as 1.81
eV. However, the peak energy of the observed PL emission is anomalously low for samples …
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