Stacked dual-oxide MOS energy band diagram visual representation program (IRW student paper)
RG Southwick, WB Knowlton - IEEE Transactions on Device …, 2006 - ieeexplore.ieee.org
RG Southwick, WB Knowlton
IEEE Transactions on Device and Materials Reliability, 2006•ieeexplore.ieee.orgEnergy band diagrams for MOS devices are essential for understanding device performance
and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer
requires an even greater understanding of the energy band behavior. A program that quickly
determines the band diagrams based on a simple analytical model was created. It is used to
explore the behavior of various oxide stacks with the ability to easily vary important
parameters like oxide material, electron affinity, bandgap, dielectric constant, and thickness …
and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2) interfacial layer
requires an even greater understanding of the energy band behavior. A program that quickly
determines the band diagrams based on a simple analytical model was created. It is used to
explore the behavior of various oxide stacks with the ability to easily vary important
parameters like oxide material, electron affinity, bandgap, dielectric constant, and thickness …
Energy band diagrams for MOS devices are essential for understanding device performance and reliability. Introduction of high-k gate stacks with a silicon dioxide (SiO 2 ) interfacial layer requires an even greater understanding of the energy band behavior. A program that quickly determines the band diagrams based on a simple analytical model was created. It is used to explore the behavior of various oxide stacks with the ability to easily vary important parameters like oxide material, electron affinity, bandgap, dielectric constant, and thickness. The usefulness of this program to predict potential reliability issues is also demonstrated
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