Strain partition of Si/SiGe and SiO2/SiGe on compliant substrates
Strain partitioning of crystalline Si and amorphous SiO2 deposited on crystalline SiGe on a
compliant viscous borophosphorosilicate BPSG glass has been observed. Pseudomorphic
epitaxial Si was deposited on SiGe films, which were fabricated on BPSG by wafer bonding
and the Smart-cut® process. The strains in SiGe and Si films were found to change
identically during a high-temperature anneal which softened the BPSG film, indicating a
coherent interface between SiGe and Si films and precluding slippage or the formation of …
compliant viscous borophosphorosilicate BPSG glass has been observed. Pseudomorphic
epitaxial Si was deposited on SiGe films, which were fabricated on BPSG by wafer bonding
and the Smart-cut® process. The strains in SiGe and Si films were found to change
identically during a high-temperature anneal which softened the BPSG film, indicating a
coherent interface between SiGe and Si films and precluding slippage or the formation of …
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