Strain relaxation of SiGe islands on compliant oxide
The relaxation of patterned, compressively strained, epitaxial Si 0.7 Ge 0.3 films transferred
to borophosphorosilicate (BPSG) glass by a wafer-bonding and etch-back technique was
studied as an approach for fabricating defect-free Si 1− x Ge x relaxed films. Both the
desired in-plane expansion and undesired buckling of the films concurrently contribute to
the relaxation. Their relative role in the relaxation process was examined experimentally and
by modeling. Using x-ray diffraction, Raman scattering and atomic force microscopy, the …
to borophosphorosilicate (BPSG) glass by a wafer-bonding and etch-back technique was
studied as an approach for fabricating defect-free Si 1− x Ge x relaxed films. Both the
desired in-plane expansion and undesired buckling of the films concurrently contribute to
the relaxation. Their relative role in the relaxation process was examined experimentally and
by modeling. Using x-ray diffraction, Raman scattering and atomic force microscopy, the …
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