Transparent and conducting tin doped cadmium oxide thin films were obtained by mixing cadmium oxide and tin oxide precursor solutions by the sol–gel method. Different tin contents in solution were studied: 0, 0.5, 1, 2, 3, 5 and 10 at.%. The films were sintered at 550 °C and, after that, annealed in N₂/H₂ gas mixture, in order to decrease their resistivity. X-ray diffraction patterns showed that doping of tin diminishes the [111] light preferred orientation of films and provokes a decrease of the average crystallite size from 30 to 12 nm. Atomic force microscopy images revealed morphological changes with the addition of tin content. All the films showed a high transmission around 75 % in the 600 < λ < 1,700 nm range and a shift of the absorption edge towards the blue region as the tin concentration was increased. The cadmium oxide films doped with 1 at.% of tin showed the lowest resistivity of 5.7 × 10⁻⁴ Ω cm and a band gap energy value of 2.7 eV. For their characteristics, these CdO:Sn films are good candidates as transparent conductive electrodes in CdS/CdTe and CdS/CIGS type solar cells.