Structural defects in (100) 3C-SiC heteroepitaxy: Influence of the buffer layer morphology on generation and propagation of stacking faults and microtwins
Growth of 3C-SiC on (100) Si has been performed via chemical vapor deposition under two
pressure regimes (low and atmospheric pressure) in the early stage of growth. Atomic force
microscopy (AFM) and transmission electron microscopy (TEM) have been conducted to
study the initial stage of growth while X-ray diffractometry (XRD) and TEM have been used to
analyze thicker films and to detect and quantify defects, resulting in a comprehensive and
detailed investigation of 3C-SiC structural defects. We have found out that the secondary …
pressure regimes (low and atmospheric pressure) in the early stage of growth. Atomic force
microscopy (AFM) and transmission electron microscopy (TEM) have been conducted to
study the initial stage of growth while X-ray diffractometry (XRD) and TEM have been used to
analyze thicker films and to detect and quantify defects, resulting in a comprehensive and
detailed investigation of 3C-SiC structural defects. We have found out that the secondary …
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