Int. Cl. The present disclosure provides a method for forming a semi HOIL 2L/70(2006.01)
conductor device that includes forming a replacement gate (52) USC... 257/407; 257/410;
257/382; 257/E27, 059 structure overlying a channel region of a Substrate. A mandrel (58)
Field of Classification Search........................ None dielectric layer is formed overlying source
and drain regions See application file for complete search history. of the substrate. The
replacement gate structure is removed to provide an opening exposing the channel region …

BACKGROUND The present disclosure relates to semiconductor devices. More particularly,
the present disclosure relates to forming gate structures and interconnects to semiconductor
devices. Field effect transistors (FETs) are the basic building block of today's integrated
circuits (ICs). Such transistors can be formed in conventional bulk semiconductor Substrates
(such as silicon) or in a SOI layer of a semiconductor-on-insulator (SOI) substrate. In order to
be able to make ICs, such as memory, logic, and other devices, of higher integration den sity …