Study of the effect of gas pressure and catalyst droplets number density on silicon nanowires growth, tapering, and gold coverage
We investigated the growth of silicon nanowires from Au-rich catalyst droplets by two
different methods: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).
The growth rate is found to be diameter-dependent and increases with increasing precursor
partial pressures. The comparison of the experimental results with models shows that the
contribution of Si atoms that diffuses from the substrate and the NW sidewalls toward the
catalyst droplet can be neglected in CVD for the different pressures used in this study …
different methods: chemical vapor deposition (CVD) and molecular beam epitaxy (MBE).
The growth rate is found to be diameter-dependent and increases with increasing precursor
partial pressures. The comparison of the experimental results with models shows that the
contribution of Si atoms that diffuses from the substrate and the NW sidewalls toward the
catalyst droplet can be neglected in CVD for the different pressures used in this study …
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