infrared plasmonic applications. The total dopant concentration was fixed at 3 at.%, in which
In and Al were varied sequentially. The as-coated films were annealed in air at 400° C
followed by second annealing at 300° C in reduced atmosphere. Films selected with respect
to carrier concentration (n) were further investigated for plasmonic applications. Films with a
particular ratio of Al and In only exhibited n~ 10 20/cm 3, necessary for plasmonic behaviour …