Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
O Khouri, G Pollaccia, F Pellizzer - US Patent 7,122,824, 2006 - Google Patents
(57) ABSTRACT A contact structure for a PCM device is formed by an elongated formation
having a longitudinal extension parallel to the upper Surface of the body and an end face
extending in a vertical plane. The end face is in contact with a bottom portion of an active
region of chalcogenic material so that the dimensions of the contact area defined by the end
face are determined by the thickness of the elongated formation and by the width thereof.
having a longitudinal extension parallel to the upper Surface of the body and an end face
extending in a vertical plane. The end face is in contact with a bottom portion of an active
region of chalcogenic material so that the dimensions of the contact area defined by the end
face are determined by the thickness of the elongated formation and by the width thereof.
Sublithographic contact structure, in particular for a phase change memory cell, and fabrication process thereof
O Khouri, G Pollaccia, F Pellizzer - US Patent 7,618,840, 2009 - Google Patents
(57) ABSTRACT A contact structure for a PCM device is formed by an elon gated formation
having a longitudinal extension parallel to the upper Surface of the body and an end face
extending in a vertical plane. The end face is in contact with a bottom portion of an active
region of chalcogenic material so that the dimen sions of the contact area defined by the end
face are deter mined by the thickness of the elongated formation and by the width thereof.
having a longitudinal extension parallel to the upper Surface of the body and an end face
extending in a vertical plane. The end face is in contact with a bottom portion of an active
region of chalcogenic material so that the dimen sions of the contact area defined by the end
face are deter mined by the thickness of the elongated formation and by the width thereof.
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