Subthreshold Analog/RF performance estimation of doping-less DGFET for ULP applications
2014 IEEE 2nd International Conference on Emerging Electronics (ICEE), 2014•ieeexplore.ieee.org
In this paper, we report the potential of the doping-less (DL) double gate field effect transistor
(DL-DGFET), for ultra low power (ULP) subthreshold logic applications. We demonstrated
that the proposed DL-DGFET do not require any doping from source to drain region and it
can perform significantly better than highly doped junctionless (JL) and abrupt S/D inversion-
mode (IM) DGFETs. The DL-DGFET achieves 1.8 X and 2.75 X cutoff frequency (f T), 1.7 X
and 3X maximum frequency of oscillation (f MAX) along with 10.5 and 18.6 dB improvement …
(DL-DGFET), for ultra low power (ULP) subthreshold logic applications. We demonstrated
that the proposed DL-DGFET do not require any doping from source to drain region and it
can perform significantly better than highly doped junctionless (JL) and abrupt S/D inversion-
mode (IM) DGFETs. The DL-DGFET achieves 1.8 X and 2.75 X cutoff frequency (f T), 1.7 X
and 3X maximum frequency of oscillation (f MAX) along with 10.5 and 18.6 dB improvement …
In this paper, we report the potential of the doping-less (DL) double gate field effect transistor (DL-DGFET), for ultra low power (ULP) subthreshold logic applications. We demonstrated that the proposed DL-DGFET do not require any doping from source to drain region and it can perform significantly better than highly doped junctionless (JL) and abrupt S/D inversion-mode (IM) DGFETs. The DL-DGFET achieves 1.8X and 2.75X cutoff frequency (f T ), 1.7X and 3X maximum frequency of oscillation (f MAX ) along with 10.5 and 18.6 dB improvement in intrinsic voltage gain (A VO ) in comparison to conventional JL and non-underlap FETs, respectively. Simulation results revealed that the DL-DGFET alleviates the inherent trade-off between gain and bandwidth of nanodevices by 6X improvement in gain frequency product (GFP) over highly doped JL-DGFET due to significant reduction in parasitic capacitances.
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