Simple and versatile, the successive ionic layer adsorption and reaction (SILAR) method was used to prepare large area (∼10 cm²) SnS₂ thin films of about 1.0 μm thickness, under optimized deposition conditions. The films were grown on amorphous glass and single crystal wafer of Si(111) to study the effect of substrate on the microstructure of the films. The SnS₂ films on glass substrate were amorphous or consisted of fine grains, while nanocrystalline grain growth was observed in filmes on single crystalline Si(111) substrate. The surface morphology of SnS₂ film on the glass substrate looked relatively smooth and homogeneous in the scanning electron microscopy (SEM) image. The SnS₂ film exhibited n-type electrical conductivity, and had an optical bandgap of 2.6 eV. The room temperature electrical resistivity was of the order of 10³ Ω-cm.