Super low density InGaAs semiconductor ring-shaped nanostructures
Crystal Growth and Design, 2008•ACS Publications
We report on the ability to fabricate super low density InGaAs semiconductor ring-shaped
nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we
demonstrate densities down to 2.3× 106 cm− 2 with only self-assembled methods based on
droplet epitaxy. This is several orders of magnitude lower than conventional nanostructures.
The formation of these ring-shaped nanostructures is driven by a self-assembled indium
nanodrilling mechanism and diffusion during crystallization.
nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we
demonstrate densities down to 2.3× 106 cm− 2 with only self-assembled methods based on
droplet epitaxy. This is several orders of magnitude lower than conventional nanostructures.
The formation of these ring-shaped nanostructures is driven by a self-assembled indium
nanodrilling mechanism and diffusion during crystallization.
We report on the ability to fabricate super low density InGaAs semiconductor ring-shaped nanocrystals on a GaAs (100) surface by molecular beam epitaxy. Specifically, we demonstrate densities down to 2.3 × 106 cm−2 with only self-assembled methods based on droplet epitaxy. This is several orders of magnitude lower than conventional nanostructures. The formation of these ring-shaped nanostructures is driven by a self-assembled indium nanodrilling mechanism and diffusion during crystallization.
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