This paper presents a method of eliminating corner effects in triple-gate bulk FinFETs. The
parasitic device in FinFET's corners can be turned off by increasing body doping in corner
regions by corner implantation. Corner implantation described in this work does not require
additional masks, rotation or tilt. This method is investigated in idealized (with rectangular
cross-section of the fin) and realistic (with rounded top corners of the fin) triple-gate bulk
FinFETs and has shown considerable improvements: kink effect in transfer characteristics is …