Suppression of current collapse in insulated gate AlGaN/GaN heterostructure field-effect transistors using ultrathin dielectric
T Hashizume, S Ootomo, H Hasegawa - Applied physics letters, 2003 - pubs.aip.org
We investigated effects of electronic states at free surfaces of AlGaN/GaN heterostructure
field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The
analysis on transient currents for the air-exposed and H 2-plasma-treated devices showed
that N-vacancy-related near-surface traps play an important role in current collapse in
AlGaN/GaN HFETs. An Al 2 O 3-based surface passivation scheme including an N 2-plasma
surface treatment was proposed and applied to an insulated-gate HFET. A large conduction …
field-effect transistors (HFETs) on the inner current transport at the heterointerfaces. The
analysis on transient currents for the air-exposed and H 2-plasma-treated devices showed
that N-vacancy-related near-surface traps play an important role in current collapse in
AlGaN/GaN HFETs. An Al 2 O 3-based surface passivation scheme including an N 2-plasma
surface treatment was proposed and applied to an insulated-gate HFET. A large conduction …
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