Volatile resistive switching random access memory (RRAM) devices are drawing attention in
both storage and computing applications due to their high ON-/OFF-ratio, fast switching
speed, low leakage, and scalability. However, these devices are relatively new and the
physical switching mechanisms are still under investigation. A thorough understanding and
modeling of the physical dynamics underlying filament formation and self-dissolution are of
utmost importance in view of future integration of volatile devices in neuromorphic systems …

Understanding the switching mechanism of the volatile resistive switching random access
memory (RRAM) device is important to harness its characteristics and further enhance its
performance. Accurate modeling of its dynamic behavior is also of deep value for its
applications both as selector and as short-term memory synapse for future neuromorphic
applications operating in temporal domain. In this work, we investigate the switching and
retention (relaxation) processes of the Ag-based metallic filamentary volatile resistive …