Synthesis and characterization of thin amorphous carbon films doped with nitrogen on (001) Si substrates

I Balchev, K Tzvetkova, S Kolev… - Journal of Physics …, 2016 - iopscience.iop.org
I Balchev, K Tzvetkova, S Kolev, P Terziiska, A Szekeres, I Miloushev, T Tenev, K Antonova
Journal of Physics: Conference Series, 2016iopscience.iop.org
We synthesized undoped as well as up to 6 at.% nitrogen (N) doped thin amorphous carbon
(α-C) films by plasma-enhanced chemical vapor deposition (PECVD) method. The source of
carbon/carbon containing radicals was benzene (C 6 H 6) in Ar gas-mixture. The obtained
thin films were studied by optical microscopy, X-ray powder diffraction, UV-VIS-NIR Spectral
Ellipsometry, IR and Raman spectroscopic studies as well as by X-ray photoelectron
spectroscopies (XPS). We established by XPS that the deposited layers consist of a mix of …
Abstract
We synthesized undoped as well as up to 6 at.% nitrogen (N) doped thin amorphous carbon (α-C) films by plasma-enhanced chemical vapor deposition (PECVD) method. The source of carbon/carbon containing radicals was benzene (C 6 H 6) in Ar gas-mixture. The obtained thin films were studied by optical microscopy, X-ray powder diffraction, UV-VIS-NIR Spectral Ellipsometry, IR and Raman spectroscopic studies as well as by X-ray photoelectron spectroscopies (XPS). We established by XPS that the deposited layers consist of a mix of sp 2 and sp 3 hybridized carbon. The films are amorphous as it was shown by the measured XRD patterns. The ellipsometric measurements enabled calculation of transition energies and the complex results showed that films with thickness of 15-120 nm and different properties can be obtained by this technique.
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