Ta–Si contacts to n-SiC for high temperatures devices
M Guziewicz, A Piotrowska, E Kaminska… - Materials Science and …, 2006 - Elsevier
The properties of Ta–Si contact to n-SiC have been investigated by complementary use of
2MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements.
Electrical properties were characterized by current–voltage characteristics and specific
contact resistance. Contact metallization was deposited on 4H-and 6H-SiC (0001) wafers by
RF magnetron sputtering the 100nm thick Ta silicide film. The Ni (100nm) film was sputtered
on reference wafers for comparative studies electrical characteristics of the contacts. The I–V …
2MeV He+ Rutherford backscattering spectroscopy and X-ray diffraction measurements.
Electrical properties were characterized by current–voltage characteristics and specific
contact resistance. Contact metallization was deposited on 4H-and 6H-SiC (0001) wafers by
RF magnetron sputtering the 100nm thick Ta silicide film. The Ni (100nm) film was sputtered
on reference wafers for comparative studies electrical characteristics of the contacts. The I–V …
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