Temperature dependence of electron-capture aftereffects in the semiconductor
AG Bibiloni, J Desimoni, CP Massolo, L Mendoza-Zélis… - Physical Review B, 1984 - APS
Physical Review B, 1984•APS
We present a series of measurements of a fluctuating perturbation in the angular correlation
of Cd 111 in In 2 O 3 powder samples. We analyze the temperature dependence of the
associated hyperfine parameters and conclude that this perturbation arises from"
aftereffects" following the electron capture of In 111. We discuss the connection of perturbed-
angular-correlation measurements of aftereffects with local electric properties at impurity
sites of semiconductors.
of Cd 111 in In 2 O 3 powder samples. We analyze the temperature dependence of the
associated hyperfine parameters and conclude that this perturbation arises from"
aftereffects" following the electron capture of In 111. We discuss the connection of perturbed-
angular-correlation measurements of aftereffects with local electric properties at impurity
sites of semiconductors.
Abstract
We present a series of measurements of a fluctuating perturbation in the angular correlation of Cd 111 in In 2 O 3 powder samples. We analyze the temperature dependence of the associated hyperfine parameters and conclude that this perturbation arises from" aftereffects" following the electron capture of In 111. We discuss the connection of perturbed-angular-correlation measurements of aftereffects with local electric properties at impurity sites of semiconductors.
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