Temperature dependence of resistivity and Hall coefficient in strongly disordered NbN thin films

M Chand, A Mishra, YM Xiong, A Kamlapure… - Physical Review B …, 2009 - APS
M Chand, A Mishra, YM Xiong, A Kamlapure, SP Chockalingam, J Jesudasan, V Bagwe
Physical Review B—Condensed Matter and Materials Physics, 2009APS
We report the temperature dependence of resistivity (ρ) and Hall coefficient (RH) in the
normal state of homogeneously disordered epitaxial NbN thin films with k F l∼ 1.68–10.12.
The superconducting transition temperature (T c) of these films varies from 2.7 to 16.8 K.
While our least disordered film displays usual metallic behavior, for all the films with k F l≤
8.13, both d ρ d T and d RH d T are negative up to 285 K. We observe that RH (T) varies
linearly with ρ (T) for all the films and [RH (T)− RH (285 K) RH (285 K)]= γ [ρ (T)− ρ (285 K) ρ …
We report the temperature dependence of resistivity and Hall coefficient in the normal state of homogeneously disordered epitaxial NbN thin films with . The superconducting transition temperature of these films varies from 2.7 to 16.8 K. While our least disordered film displays usual metallic behavior, for all the films with , both dρdT and dRHdT are negative up to 285 K. We observe that varies linearly with for all the films and [ RH(T)−RH(285 K)RH(285 K) ]=γ[ ρ(T)−ρ(285 K)ρ(285 K) ], where . Measurements performed on a 2-nm-thick Be film show similar behavior with . This behavior is inconsistent with existing theories of localization and interactions in a disordered metal.
American Physical Society
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