Temperature dependent dielectric behavior of sol–gel grown Y0. 95Ca0. 05MnO3/Si junction
We have successfully fabricated divalent doped Y0. 95Ca0. 05MnO3 film on (100) single
crystalline n-type Si substrate by spin coating assisted chemical solution deposition
technique. The X–ray diffraction (XRD) pattern of thin film depicts that the film has (h00)
directional growth on substrate. Thin film possesses–1.4% compressive strain at the
interface level and thin film thickness is found to be~ 78nm. Dielectric property of film has
been studied by Agilent LCR meter from 100Hz to 2MHz applied field frequency at …
crystalline n-type Si substrate by spin coating assisted chemical solution deposition
technique. The X–ray diffraction (XRD) pattern of thin film depicts that the film has (h00)
directional growth on substrate. Thin film possesses–1.4% compressive strain at the
interface level and thin film thickness is found to be~ 78nm. Dielectric property of film has
been studied by Agilent LCR meter from 100Hz to 2MHz applied field frequency at …
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