Terahertz-radiation generation in low-temperature InGaAs epitaxial films on (100) and (411) InP substrates
GB Galiev, MM Grekhov, GK Kitaeva, EA Klimov… - Semiconductors, 2017 - Springer
Semiconductors, 2017•Springer
The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-
temperature In 0.53 Ga 0.47 As epitaxial films under femtosecond laser pumping are
investigated by terahertz time-resolved spectroscopy. The In 0.53 Ga 0.47 As films are
fabricated by molecular-beam epitaxy at a temperature of 200° C under different arsenic
pressures on (100)-oriented InP substrates and, for the first time, on (411) A InP substrates.
The surface morphology of the samples is studied by atomic-force microscopy and the …
temperature In 0.53 Ga 0.47 As epitaxial films under femtosecond laser pumping are
investigated by terahertz time-resolved spectroscopy. The In 0.53 Ga 0.47 As films are
fabricated by molecular-beam epitaxy at a temperature of 200° C under different arsenic
pressures on (100)-oriented InP substrates and, for the first time, on (411) A InP substrates.
The surface morphology of the samples is studied by atomic-force microscopy and the …
Abstract
The spectrum and waveforms of broadband terahertz-radiation pulses generated by low-temperature In0.53Ga0.47As epitaxial films under femtosecond laser pumping are investigated by terahertz time-resolved spectroscopy. The In0.53Ga0.47As films are fabricated by molecular-beam epitaxy at a temperature of 200°C under different arsenic pressures on (100)-oriented InP substrates and, for the first time, on (411)A InP substrates. The surface morphology of the samples is studied by atomic-force microscopy and the structural quality is established by high-resolution X-ray diffraction analysis. It is found that the amplitude of terahertz radiation from the LT-InGaAs layers on the (411)A InP substrates exceeds that from similar layers formed on the (100) InP substrates by a factor of 3–5.
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