The performance of fluorine-doped tin oxide (FTO) as an alternative semiconductor besides indium tin oxide (ITO) has been investigated. Currently, the precursors often used in the manufacture of fluorine-doped tin oxide (FTO) are commercial precursors on the market. In the present work, a thin film FTO will be fabricated using a pyrolysis spray technique with an ultrasonic nebulizer using Indonesian local precursors of stannic chloride with the variation of deposition times (5, 10, 15, 20 and 25 minus). Thin films were characterized by using x-ray diffraction (XRD), scanning electron microscope (SEM), ultraviolet-visible (UV-Vis) spectroscopy, and four-point probes. The optimum result obtained by pyrolysis technique with a deposition time of 20 minutes and substrate temperature at 300 C has a resistivity of 1.059 x 10− 4 Ω. cm and transmittance 89.614%. Fluorine-doped tin oxide (FTO) fabricated by using these local Indonesian precursors promise for further development as a glass of dye-sensitized solar cells (DSSC).