The carbon and hydrogen contents in ALD-grown ZnO films define a narrow ALD temperature window
B Xia, JJ Ganem, E Briand, S Steydli, H Tancrez… - Vacuum, 2021 - Elsevier
Zinc oxide thin films grown by atomic layer deposition have been subject to great attention
over the past few years. In this work, we study ZnO films grown on Si substrates by atomic
layer deposition with di-ethyl zinc (DEZ) as metal precursor and H 2 O or D 2 O water vapour
as oxidant. Film composition as a function of growth temperature is studied by Ion Beam
Analysis (IBA) using Rutherford Backscattering Spectrometry (RBS) to determine Zn areal
density; Nuclear Reaction Analysis (NRA) for C and O areal density, and Elastic Recoil …
over the past few years. In this work, we study ZnO films grown on Si substrates by atomic
layer deposition with di-ethyl zinc (DEZ) as metal precursor and H 2 O or D 2 O water vapour
as oxidant. Film composition as a function of growth temperature is studied by Ion Beam
Analysis (IBA) using Rutherford Backscattering Spectrometry (RBS) to determine Zn areal
density; Nuclear Reaction Analysis (NRA) for C and O areal density, and Elastic Recoil …
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