The effect of the boron doping level on the thermal behavior of end-of-range defects in silicon
The effect of the doping level on the formation and growth of end-of-range (EOR) defects is
studied. Transmission electron microscopy observations have been performed on boron
doped Si wafers (from 10 15 to 10 20 atom 3) preamorphized with germanium and subjected
to rapid thermal annealing. When increasing the doping level up to a few 10 18 atom 3, a
delay in the coarsening process encountered by the loops is observed while above this
threshold the EOR defects quickly disappear. These results are interpreted by considering …
studied. Transmission electron microscopy observations have been performed on boron
doped Si wafers (from 10 15 to 10 20 atom 3) preamorphized with germanium and subjected
to rapid thermal annealing. When increasing the doping level up to a few 10 18 atom 3, a
delay in the coarsening process encountered by the loops is observed while above this
threshold the EOR defects quickly disappear. These results are interpreted by considering …
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