[HTML][HTML] The effects of wetting layer on electronic and optical properties of intersubband P-to-S transitions in strained dome-shaped InAs/GaAs quantum dots
M Shahzadeh, M Sabaeian - AIP Advances, 2014 - pubs.aip.org
The authors report on the impact of wetting layer thickness and quantum dot size on the
electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with
strained potential. Two wetting layer thicknesses of 0.5 and 2.0 nm were compared. A strong
size dependence of P-to-S transition energy, transition dipole moment, oscillator strength,
and linear and third-order nonlinear susceptibilities were concluded. The P-to-S transition
dipole moment was shown to be purely in-plane polarization. The linear and nonlinear …
electronic and optical properties of dome-shaped InAs/GaAs quantum dots (QDs) with
strained potential. Two wetting layer thicknesses of 0.5 and 2.0 nm were compared. A strong
size dependence of P-to-S transition energy, transition dipole moment, oscillator strength,
and linear and third-order nonlinear susceptibilities were concluded. The P-to-S transition
dipole moment was shown to be purely in-plane polarization. The linear and nonlinear …
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