It seems likely that density concerns will force the DRAM community to consider using
radically different schemes for the implementation of memory devices. We propose using
nano-scale carbon structures as the basis for a memory device. A single-wall carbon
nanotube would contain a charged buckyball. That buckyball will stick tightly to one end of
the tube or the other. We assign the bit value of the device depending on which side of the
tube the ball is. The result is a high-speed, non-volatile bit of memory. We propose a number …

It seems likely that density concerns will force the DRAM community to consider using
radically different schemes for Ihe implementation of memory devices. We propose using
nano-scale carbon structures as the basis for a memory device. A single-wall carbon
nanotube would contain a charged buckyball. That buckyball wiLL stick tightly to one end
ofthe tube or the other. We assign the bit value of the device depending on which side of the
tube the ball is. The result is a high-speed, non-volatile bit ofmemory. We propose a number …